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SI1054X-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI1054X-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 69579 S-80641-Rev. B, 24-Mar-08 Vishay Siliconix Si1054X New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 TJ =150 °C VSD - Source-to-Drain Voltage (V) TJ =25 °C TJ - Temperature (°C) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID =250 µA RDS(on) vs. VGS vs. Temperature Single Pulse Power 0.03 0.06 0.09 0.12 0.15 012345 ID =1.32 A VGS - Gate-to-Source Voltage (V) TA =125 °C TA = 25 °C 0 1 2 3 4 5 0.01 1 10 1000 0.1 Time (s) 100 Safe Operating Area, Junction-to-Ambient 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms DC VDS - Drain-to-Source Voltage (V) * VGS >minimum VGS at which RDS(on) is specified BVDSS Limited 100 100 ms 1s 10 s Limited byRDS(on)* 1ms |
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