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SI1026X-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1026X-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  Vishay Siliconix Si1026X Document Number: 71434 S-80643-Rev. C, 24-Mar-08 www.vishay.com 1 N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available • Low On-Resistance: 1.40 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output Leakage • ESD Protected: 2000 V • Miniature Package BENEFITS • Low Offset Voltage • Low-Voltage Operation • High-Speed Circuits • Low Error Voltage • Small Board Area APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω)VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 Marking Code: E Top View 3 1 D2 G2 S1 5 2 4 6 D1 S2 G1 SC-89 Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free) Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 320 305 mA TA = 85 °C 230 220 Pulsed Drain Currentb IDM - 650 Continuous Source Current (Diode Conduction)a IS 450 380 Maximum Power Dissipationa TA = 25 °C PD 280 250 mW TA = 85 °C 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V RoHS COMPLIANT |
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