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Document Number: 71434

S-80643-Rev. C, 24-Mar-08

Vishay Siliconix

Si1026X

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. For DESIGN AID ONLY,, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

60

V

Gate Threshold Voltage

1

2.5

Gate-Body Leakage

± 150

nA

± 50

Zero Gate Voltage Drain Current

1

µA

10

500

mA

800

3.0

Ω

1.40

2.50

200

mS

1.40

V

Total Gate Charge

600

pC

Gate-Source Charge

120

Gate-Drain Charge

225

Input Capacitance

f = 1 MHz

30

pF

Output Capacitance

6

Reverse Transfer Capacitance

3

Turn-On Time

15

ns

Turn-Off Time

20