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SI1016X Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1016X Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71168 S-80427-Rev. D, 03-Mar-08 Vishay Siliconix Si1016X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.45 1 V VDS = VGS, ID = - 250 µA P-Ch - 0.45 - 1 Gate Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V N-Ch ± 0.5 ± 1.0 µA P-Ch ± 1.0 ± 2.0 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V N-Ch 0.3 100 nA VDS = - 16 V, VGS = 0 V P-Ch - 0.3 - 100 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 µA VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 5 On State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V N-Ch 700 mA VDS = - 5 V, VGS = - 4.5 V P-Ch - 700 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 600 mA N-Ch 0.41 0.70 Ω VGS = - 4.5 V, ID = - 350 mA P-Ch 0.80 1.2 VGS = 2.5 V, ID = 500 mA N-Ch 0.53 0.85 VGS = - 2.5 V, ID = - 300 mA P-Ch 1.20 1.6 VGS = 1.8 V, ID = 350 mA N-Ch 0.70 1.25 VGS = - 1.8 V, ID = - 150 mA P-Ch 1.80 2.7 Forward Transconductancea gfs VDS = 10 V, ID = 400 mA N-Ch 1.0 S VDS= - 10 V, ID = - 250 mA P-Ch 0.4 Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V N-Ch 0.8 1.2 V IS = - 150 mA, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Ch 750 pC P-Ch 1500 Gate-Source Charge Qgs N-Ch 75 P-Ch 150 Gate-Drain Charge Qgd N-Ch 225 P-Ch 450 Turn-On Time tON N-Channel VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω P-Channel VDD = - 10 V, RL = 47 Ω ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω N-Ch 5 ns P-Ch 5 Turn-Off Time tOFF N-Ch P-Ch 25 35 |
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