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SI1016X-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI1016X-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 71168 S-80427-Rev. D, 03-Mar-08 www.vishay.com 3 Vishay Siliconix Si1016X N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 1.8 V VDS - Drain-to-Source Voltage (V) 1 V 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 ID - Drain Current (mA) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 VDS = 10 V ID = 250 mA Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) 0 20 40 60 80 100 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V f = 1 MHz 0.60 0.80 1.00 1.20 1.40 1.60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) VGS = 4.5 V ID = 350 mA VGS = 1.8 V ID = 150 mA |
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