VB20200C datasheet(3/5 Pages) VISHAY

Part #	VB20200C

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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V20200C, VF20200C, VB20200C & VI20200C

Vishay General Semiconductor

Document Number: 89072

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T

A = 150 °C

T

A = 125 °C

T

A = 25 °C

Instantaneous Forward Voltage (V)

T

A = 100 °C

0.0001

0.01

0.1

1

10

100

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

A = 150 °C

T

A = 125 °C

T

A = 25 °C

T

A = 100 °C

0.001

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

J = 25 °C

f = 1.0 MHz

V

sig = 50 mVp-p

Figure 6. Typical Transient Thermal Impedance Per Diode

Figure 7. Typical Transient Thermal Impedance Per Diode

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

V20200C

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

VF20200C

Similar Part No. - VB20200C

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VB20200C	160Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	VB20200C	157Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Revision: 16-Aug-13
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VB20200C Datasheet(PDF) 3 Page - Vishay Siliconix

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