Document Number: 91284

www.vishay.com

S-81378-Rev. A, 07-Jul-08

1

Power MOSFET

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

FEATURES

• P-Channel

• Surface Mount (IRFR9310/SiHFR9310)

• Straight Lead (IRFU9310/SiHFU9310)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced

processing

techniques

to

achieve

low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

- 400

7.0

13

3.2

5.0

Configuration

Single

S

G

D

P-Channel MOSFET

D PAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR9310PbF

IRFU9310PbF

SiHFR9310-E3

SiHFU9310-E3

SnPb

IRFR9310

-

IRFU9310

SiHFR9310

-

SiHFU9310

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 400

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 1.8

A

- 1.1

- 7.2

Linear Derating Factor

0.40

W/°C

92

mJ

- 1.8

A

5.0

mJ

Maximum Power Dissipation

50

W

dV/dt

- 24

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply