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SIHFR9022TL Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFR9022TL Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91349 2 S-Pending-Rev. A, 10-Jun-08 IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). Maximum Power Dissipation TC = 25 °C PD 42 W Peak Diode Recovery dV/dtc dV/dt 5.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Case-to-Sink RthCS -1.7 - Maximum Junction-to-Case (Drain) RthJC -- 3.0 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 50 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - 250 µA VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C - - 1000 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = 5.7 Ab - 0.28 0.33 Ω Forward Transconductance gfs VDS ≤ - 50 V, IDS = - 5.7 A 2.3 3.5 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 - 490 - pF Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss -70 - Total Gate Charge Qg VGS = - 10 V ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 16 (Independent operating temperature) -9.4 14 nC Gate-Source Charge Qgs -4.3 6.5 Gate-Drain Charge Qgd -4.3 6.5 Turn-On Delay Time td(on) VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 15 (Independent operating temperature) -8.2 12 ns Rise Time tr -57 66 Turn-Off Delay Time td(off) -12 18 Fall Time tf -25 38 Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact. -4.5 - nH Internal Source Inductance LS -7.5 - D S G |
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