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IRFR430ATRLPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFR430ATRLPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91276 2 S-81366-Rev. A, 07-Jul-08 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.0 Ab -- 1.7 Ω Forward Transconductance gfs VDS = 50 V, ID = 3.0 A 2.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 490 - pF Output Capacitance Coss -75 - Reverse Transfer Capacitance Crss -4.5 - Output Capacitance Coss VGS = 10 V VDS = 1.0 V, f = 1.0 MHz - 750 - pF VDS = 400 V, f = 1.0 MHz - 25 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc -51 - Total Gate Charge Qg VGS = 10 V ID = 5.0 A, VDS = 400 V, see fig. 6 and 13b -- 24 nC Gate-Source Charge Qgs -- 6.5 Gate-Drain Charge Qgd -- 13 Turn-On Delay Time td(on) VDD = 250 V, ID = 5.0 A, RG = 15 Ω, RD = 50 Ω, see fig. 10b -8.7 - ns Rise Time tr -27 - Turn-Off Delay Time td(off) -17 - Fall Time tf -16 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 5.0 A Pulsed Diode Forward Currenta ISM -- 20 Body Diode Voltage VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb - 410 620 ns Body Diode Reverse Recovery Charge Qrr -1.4 2.1 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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