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SIHFR320 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFR320 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91273 www.vishay.com S-81367-Rev. A, 21-Jul-08 1 Power MOSFET IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) • Straight Lead (IRFU320/SiHFU320) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12). c. ISD ≤ 3.1 A, dI/dt ≤ 65 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω)VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR320PbF IRFR320TRLPbFa IRFR320TRPbFa IRFR320TRRPbFa IRFU320PbF SiHFR320-E3 SiHFR320TL-E3a SiHFR320T-E3a SiHFR320TR-E3a SiHFU320-E3 SnPb IRFR320 IRFR320TRLa IRFR320TRa IRFR320TRRa IRFU320 SiHFR320 SiHFR320TLa SiHFR320Ta SiHFR320TRa SiHFU320 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.1 A TC = 100 °C 2.0 Pulsed Drain Currenta IDM 12 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 160 mJ Repetitive Avalanche Currenta IAR 3.1 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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