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BFP193TRW Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BFP193TRW
Description  Silicon NPN Planar RF Transistor
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BFP193TRW Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85015
Rev. 1.3, 05-Sep-08
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35
μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
RthJA
250
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter cut-off current
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
12
V
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
VCEsat
0.1
0.5
V
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
hFE
50
100
150


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