SIHFR120TR datasheet(3/8 Pages) VISHAY

Part #	SIHFR120TR

Description	IRFR120

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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3 / 8 page

Document Number: 91266

www.vishay.com

S-Pending-Rev. A, 21-Jul-08

3

IRFR120, IRFU120, SiHFR120, SiHFU120

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

7.7

A

Pulsed Diode Forward Currenta

ISM

--

31

Body Diode Voltage

VSD

TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb

--

2.5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb

-

130

260

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.65

1.3

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

S

D

G

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