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IRFR110TRRPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFR110TRRPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91265 www.vishay.com S-81394-Rev. A, 21-Jul-08 1 Power MOSFET IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR110/SiHFR110) • Straight Lead (IRFU110/SiHFU110) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω)VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR110PbF IRFR110TRLPbFa IRFR110TRPbFa IRFR110TRRPbFa IRFU110PbF SiHFR110-E3 SiHFR110TL-E3a SiHFR110T-E3a SiHFR110TR-E3a SiHFU110-E3 SnPb IRFR110 IRFR110TRLa IRFR110TRa - IRFU110 SiHFR110 SiHFR110TLa SiHFR110Ta -SiHFU110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 4.3 A TC = 100 °C 2.7 Pulsed Drain Currenta IDM 17 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 100 mJ Repetitive Avalanche Currenta IAR 4.3 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply |
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