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BA779S Datasheet(PDF) 2 Page - Vishay Siliconix |
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BA779S Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85532 Rev. 1.7, 19-Feb-07 BA779/BA779S Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage IF = 20 mA VF 1000 mV Reverse current VR = 30 V IR 50 nA Diode capacitance f = 100 MHz, VR = 0 CD 0.5 pF Differential forward resistance f = 100 MHz, IF = 1.5 mA rf 50 Ω Reverse impedance f = 100 MHz, VR = 0 BA779 zr 5k Ω BA779S zr 9k Ω Minority carrier lifetime IF = 10 mA, IR = 10 mA τ 4µs Figure 1. Forward Current vs. Forward Voltage Figure 2. Differential Forward Resistance vs. Forward Current 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 2.0 95 9735 VF - Forward Voltage (V) Tamb = 25 °C Scattering Limit 0.001 0.01 0.1 1 1 10 100 1000 10000 10 95 9734 IF - Forward Current (mA) f>20MHz Tj =25 °C Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 - 80 - 60 - 40 - 20 0 20 f2 , modulated with 200 kHz, m = 100 % (MHz) 80 60 40 20 0 95 9733 - Circuit with 10 dB Attenuation V0 =40dBmV f1 = 100 MHz unmodulated Π |
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