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IL66-1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL66-1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83638 2 Rev. 1.6, 13-Dec-07 IL66/ILD66/ILQ66 Vishay Semiconductors Optocoupler, Photodarlington Output, with Internal RBE (Single, Dual, Quad Channel) Note For additional information on the available options refer to option information. Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. IL66-4X009 CTR ≥ 500 %, SMD-8 (option 9) ILD66-2X007 CTR ≥ 300 %, SMD-8 (option 7) ILD66-3X009 CTR ≥ 400 %, SMD-8 (option 9) ILD66-4X009 CTR ≥ 500 %, SMD-8 (option 9) ILQ66-4X007 CTR ≥ 500 %, SMD-16 (option 7) ILQ66-4X009 CTR ≥ 500 %, SMD-16 (option 9) ORDER INFORMATION PART REMARKS ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Peak reverse voltage VRM 6.0 V Forward continuous current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C OUTPUT Power dissipation Pdiss 150 mW Derate from 25 °C 2.0 mW/°C COUPLER Isolation test voltage t = 1.0 s VISO 5300 VRMS Total package power dissipation IL66 Ptot 250 mW ILD66 Ptot 400 mW ILQ66 Ptot 500 mW Derate linearly from 25 °C IL66 3.3 mW/°C ILD66 5.33 mW/°C ILQ66 6.67 mW/°C Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Comparative tracking index CTI 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 20 mA VF 1.25 1.5 V Reverse current VR = 6.0 V IR 0.1 10 µA Capacitance VR = 0 V CO 25 pF |
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