Document Number: 91213

www.vishay.com

S-Pending-Rev. A, 24-Jun-08

3

IRFP254N, SiHFP254N

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

0.1

1

10

100

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

Top

Bottom

4.5 V

20 µs PULSE WIDTH

TJ = 25 °C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

Top

Bottom

4.5 V

20 µs PULSE WIDTH

TJ = 175 °C

TJ = 25 °C

TJ = 175 °C

5.0

4.0

7.0

6.0

8.0

9.0

1

10

100

VGS, Gate-to-Source Voltage (V)

VDS = 50 V

20 µs PULSE WIDTH

ID = 23 A

VGS = 10 V

TJ, Junction Temperature ( °C)

20

40

60

80 100 120 140 160

0.0

1.0

2.0

3.0

-60 -40 -20

0

4.0