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SIHFP31N50L-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SIHFP31N50L-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 8 page Document Number: 91220 www.vishay.com S-81274-Rev. A, 16-Jun-08 5 IRFP31N50L, SiHFP31N50L Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms TC, Case Temperature (°C) 25 50 75 100 125 150 0 5 15 20 25 35 10 30 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R G D.U.T. 10 V + - V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 0.001 0.01 0.1 1 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) 0.00001 0.0001 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC PDM A R G IAS 0.01 Ω tp D.U.T L VDS + - VDD Driver A 15 V 20 V IAS VDS tp |
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