ECH8660

No. A1358-6/6

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures

or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give

rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but

are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

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party's intellectual property rights which has resulted from the use of the technical information and products

mentioned above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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PS

This catalog provides information as of November, 2008. Specifications and information herein are subject

to change without notice.

Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

IT14197

IT14196

PD -- Ta

0

0

20

40

0.4

60

80

100

120

140

160

0.8

1.2

1.6

1.8

0.2

0.6

1.0

1.4

1.5

1.3

1unit

Total

Dissipation

When mounted on ceramic substrate

×0.8mm)

Ambient Temperature, Ta --

°C

A S O

Drain-to-Source Voltage, VDS -- V

2

2

3

5

7

--0.1

2

3

5

7

--1.0

--0.01

--0.1

2

--1.0

57

32

--10

57

32

3

5

Operation in this

area is limited by RDS(on).

100ms

DC

operation

(T

a=25°

C)

10ms

2

3

5

7

3

5

7

--10

IDP= --30A

ID= --4.5A

100

μs

1ms

[Pch]

[Nch/Pch]

PW

≤10μs

Ta=25

Single pulse

When mounted on ceramic substrate

×0.8mm)

Total Gate Charge, Qg -- nC

VGS -- Qg

[Pch]

01234

6

8

57

10

911

0

--1

--2

--3

--4

--5

--6

--7

--8

--10

--9

IT14194

VDS= --10V

ID= --4.5A