EFC4606

No. A1177-1/6

Features

•

2.5V drive.

•

Best suited for LiB charging and discharging switch.

•

Common-drain type.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Source-to-Source Voltage

VSSS

24

V

Gate-to-Source Voltage

VGSS

±12

V

Source Current (DC)

IS

6A

Source Current (Pulse)

ISP

PW≤100μs, duty cycle≤1%

60

A

Total Dissipation

PT

✕0.8mm)

1.6

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Source-to-Source Breakdown Voltage

V(BR)SSS

IS=1mA, VGS=0V

Test Circuit 1

24

V

Zero-Gate Voltage Source Current

ISSS

VSS=20V, VGS=0V

Test Circuit 1

1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VSS=0V

Test Circuit 2

±10

μA

Cutoff Voltage

VGS(off)

VSS=10V, IS=1mA

Test Circuit 3

0.5

1.3

V

Forward Transfer Admittance

⏐yfs⏐

VSS=10V, IS=3A

Test Circuit 4

5.3

8.9

S

RSS(on)1

IS=3A, VGS=4.5V

Test Circuit 5

22

30

38

mΩ

Static Source-to-Source On-State Resistance

RSS(on)2

IS=3A, VGS=4.0V

Test Circuit 5

23

32

41

mΩ

RSS(on)3

IS=1.5A, VGS=3.1V

Test Circuit 5

26

35

45

mΩ

RSS(on)4

IS=1.5A, VGS=2.5V

Test Circuit 5

30.5

41

57.5

mΩ

Marking : FF

Continued on next page.

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DATA SHEET

92408PF TI IM TC-00001623

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customer

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EFC4606

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Ordering number : ENA1177