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ENA1319 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ENA1319
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ENA1319 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP207
No. A1319-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=33A
12
20
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=33A, VGS=10V
7
9.1
mΩ
RDS(on)2
ID=17A, VGS=4.5V
11
15.5
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
2710
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
330
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
220
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
See specified Test Circuit.
290
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
170
ns
Fall Time
tf
See specified Test Circuit.
110
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=65A
54
nC
Gate-to-Source Charge
Qgs
VDS=20V, VGS=10V, ID=65A
14
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=65A
11
nC
Diode Forward Voltage
VSD
IS=65A, VGS=0V
1.0
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.4
0.55
13
2
6.5
0.6
4
0.8
1.5
0.4
2.6
4.6
0.4
2.3
2.3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=33A
RL=0.61Ω
VDD=20V
VOUT
ATP207
VIN
10V
0V
VIN


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