111RKI80PBF datasheet(6/7 Pages) VISHAY

Part #	111RKI80PBF

Description	Phase Control Thyristors (Stud Version), 110 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 94379

6

Revision: 11-Aug-08

110RKI...PbF/111RKI...PbF Series

Vishay High Power Products Phase Control Thyristors

(Stud Version), 110 A

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

0.1

1.0

10

100

0.001

0.01

0.1

1.0

10

Instantaneous Gate Current (A)

100

1000

V

GD

I

GD

(b)

(a)

(1)

(3)

Frequency limited by P

G(AV)

(2)

(1) P

GM = 12 W, tp = 5 ms

(2) P

GM = 30 W, tp = 2 ms

(3) P

GM = 60 W, tp = 1 ms

(4) P

GM = 200 W, tp = 300 µs

Device: 111RKI Series

(4)

Rectangular gate pulse

a) Recommended load line for

rated dI/dt: 20 V, 30

Ω

t

r ≤ 0.5 µs, tp ≥ 6 µs

b) Recommended load line for

≤ 30 % rated dI/dt: 15 V, 40 Ω

t

r ≤ 1 µs, tp ≥ 6 µs

1

-IT(AV) rated average output current (rounded/10)

2

-

0 = Eyelet terminals (gate and auxiliary cathode leads)

3

-

Thyristor

4

5

-

Lead (Pb)-free

1 = Fast-on terminals (gate and auxiliary cathode leads)

-

Voltage code x 100 = VRRM (see Voltage Ratings table)

Device code

5

13

24

11

0

RKI

120 PbF

LINKS TO RELATED DOCUMENTS

Dimensions

http://www.vishay.com/doc?95003

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