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ENA1348 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA1348 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page  PCP1203 No. A1348-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=30V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA DC Current Gain hFE VCE=2V, IC=100mA 200 560 Gain-Bandwidth Product fT VCE=10V, IC=300mA 500 MHz Output Capacitance Cob VCB=10V, f=1MHz 8 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=0.75A, IB=15mA 150 225 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=0.75A, IB=15mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V Turn-On Time ton See specified Test Circuit. 35 ns Storage Time tstg See specified Test Circuit. 205 ns Fall Time tf See specified Test Circuit. 30 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-004 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 To p View Bo tto m View RB VCC=12V IC=20IB1= --20IB2=0.75A + 50Ω INPUT OUTPUT RL 820μF PW=50μs IB1 D.C.≤1% IB2 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IC -- VBE Base-to-Emitter Voltage, VBE -- V 40mA 30mA 20mA 2.0 1.4 1.2 1.6 1.8 1.0 0.4 0.2 0.6 0.8 0 0 0.4 0.8 0.9 1.0 0.2 0.6 0.3 0.7 0.1 0.5 IB=0mA IT14121 2mA 4mA 6mA 10mA 8mA VCE=2V 1.6 1.2 0.6 0.8 1.4 1.0 0.2 0.4 0 0 0.2 0.4 0.6 0.8 1.2 1.0 IT14122 |
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Similar Description - ENA1348 |
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