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MCH6121 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. MCH6121
Description  PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifi er
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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 2 page
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MCH6121
No. A1286-2/4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : MCPH6
2.0
0.3
0.65
0.15
0 t o 0.02
65
4
12
3
65
4
12
3
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB= -12V, IE=0A
-0.1
μA
Emitter Cutoff Current
IEBO
VEB= -4V, IC=0A
-0.1
μA
DC Current Gain
hFE
VCE= -2V, IC= -500mA
200
560
Gain-Bandwidth Product
fT
VCE= -2V, IC= -500mA
380
MHz
Output Capacitance
Cob
VCB= -10V, f=1MHz
40
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC= -1.5A, IB= -30mA
-110
-165
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC= -1.5A, IB= -30mA
-0.85
-1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC= -10μA, IE=0A
-15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC= -1mA, RBE=∞
-12
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE= -10μA, IC=0A
-5
V
Turn-On Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
90
ns
Fall Time
tf
See specified Test Circuit.
14
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7022A-007
VR
1kΩ
VCC= --5V
VBE=5V
--20IB1=20IB2=IC=--1.5A
+
+
50Ω
INPUT
OUTPUT
RL
220μF
470μF
PW=20μs
IB1
D.C.1%
IB2
IT04544
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
--2.0
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
--1.8
--2mA
--4mA
--6mA
--8mA
--10mA
--12mA
IB=0mA
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
IT04545
0
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
VCE=--2V




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