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SIHFBC40STL-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFBC40STL-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91116 www.vishay.com S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix FEATURES • Surface Mount (IRFBC40S/SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC20S, SiHFBC20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L/SiHFBC40L) is available for low-profile applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 1.2 Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFBC40SPbF IRFBC40STRLPbFa IRFBC40LPbF SiHFBC40S-E3 SiHFBC40STL-E3a SiHFBC40L-E3 SnPb IRFBC40S IRFBC40STRLa IRFBC40L SiHFBC40S SiHFBC40STLa SiHFBC40L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltagee VDS 600 V Gate-Source Voltagee VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 6.2 A TC = 100 °C 3.9 Pulsed Drain Currenta,e IDM 25 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 570 mJ Repetitive Avalanche Currenta IAR 6.2 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 130 W TA = 25 °C 3.1 Peak Diode Recovery dV/dtc, e dV/dt 3.0 V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply |
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