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30BQ100G Datasheet(PDF) 1 Page - Vishay Siliconix |
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30BQ100G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 94506 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 24-Apr-08 1 Schottky Rectifier, 3 A 30BQ100GPbF Vishay High Power Products FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free (“PbF” suffix) • Designed and qualified for industrial level DESCRIPTION The 30BQ100GPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY IF(AV) 3.0 A VR 100 V Cathode Anode SMC Available RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 3.0 A VRRM 100 V IFSM tp = 5 µs sine 800 A VF 3.0 Apk, TJ = 125 °C 0.62 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL 30BQ100GPbF UNITS Maximum DC reverse voltage VR 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TL = 148 °C, rectangular waveform 3.0 A 50 % duty cycle at TL = 138 °C, rectangular waveform 4.0 Maximum peak one cycle non-repetitive surge current IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 800 10 ms sine or 6 ms rect. pulse 70 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 6 mH 3.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A * Pb containing terminations are not RoHS compliant, exemptions may apply |
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