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SIHFB17N50L-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHFB17N50L-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91098 4 S-81263-Rev. A, 21-Jul-08 IRFB17N50L, SiHFB17N50L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Crss Coss Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1 10 100 1000 10 100 1000 10 000 1 000 000 VDS, Drain-to-Source Voltage (V) VDS = 400 V VDS = 250 V VDS = 100 V ID = 16 A 0 30 60 90 120 150 0 4 8 12 16 20 QG, Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C VGS = 0 V 100 0.2 0.9 0.6 1.3 1.6 0.1 1 10 OPERATING IN THIS AREA LIMITED BY RDS(on) 10 ms 1 ms 100 μs 10 μs TC = 25 °C TJ = 150 °C Single Pulse 10 100 1000 10000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) |
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