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IRF840LCL Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF840LCL Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91068 www.vishay.com S-Pending-Rev. A, 02-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Lead (Pb)-free Available DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12). c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRF840LC/SiHF840LC data and test conditions. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF840LCSPbF - IRF840LCLPbF SiHF840LCS-E3 - SiHF840LCL-E3 SnPb IRF840LCS IRF840LCSTRRa IRF840LCL SiHF840LCS SiHF840LCSTa SiHF840LCL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 A TC = 100 °C 5.1 Pulsed Drain Currenta, e IDM 28 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 510 mJ Avalanche Currenta IAR 8.0 A Repetiitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W TA = 25 °C 125 Peak Diode Recovery dV/dtc, e dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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