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IRF840APBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF840APBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91065 www.vishay.com S-81275-Rev. A, 16-Jun-08 1 Power MOSFET IRF840A, SiHF840A Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge • Full Bridge Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12). c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.85 Qg (Max.) (nC) 38 Qgs (nC) 9.0 Qgd (nC) 18 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRF840APbF SiHF840A-E3 SnPb IRF840A SiHF840A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 A TC = 100 °C 5.1 Pulsed Drain Currenta IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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