2SK4137 datasheet(2/4 Pages) SANYO

Part #	2SK4137

Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2SK4137

No. A1019-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

3

5

V

Forward Transfer Admittance

⏐yfs⏐

VDS=10V, ID=5A

3

6

S

Static Drain-to-Source On-State Resistance

RDS(on)

ID=5A, VGS=10V

0.5

0.65

Ω

Input Capacitance

Ciss

VDS=30V, f=1MHz

750

pF

Output Capacitance

Coss

VDS=30V, f=1MHz

150

pF

Reverse Transfer Capacitance

Crss

VDS=30V, f=1MHz

35

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

16

ns

Rise Time

tr

See specified Test Circuit.

44

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

102

ns

Fall Time

tf

See specified Test Circuit.

47

ns

Total Gate Charge

Qg

VDS=200V, VGS=10V, ID=10.5A

30

nC

Gate-to-Source Charge

Qgs

VDS=200V, VGS=10V, ID=10.5A

5.2

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=200V, VGS=10V, ID=10.5A

17

nC

Diode Forward Voltage

VSD

IS=10.5A, VGS=0V

0.9

1.2

V

Package Dimensions

unit : mm (typ)

7002-001

Switching Time Test Circuit

Avalanche Resistance Test Circuit

6.2

7.8

8.2

1.0

5.08

2.54

0.3

0.6

7.8

10.0

6.0

1

2

3

1 : Gate

2 : Source

3 : Drain

SANYO : ZP

PW=10μs

D.C.≤0.5%

P.G

RGS=50Ω

G

S

D

ID=5A

RL=40Ω

VDD=200V

VOUT

2SK4137

VIN

10V

0V

VIN

50

Ω

≥50Ω

RG

VDD

L

10V

0V

2SK4137

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