Document Number: 91046

www.vishay.com

S-Pending-Rev. A, 30-May-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Sspeed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset

(Both US Line Input Only)

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRF730A/SiHF730A data and test condition

PRODUCT SUMMARY

400

1.0

22

5.8

9.3

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF730ASPbF

IRF730ALPbF

SiHF730AS-E3

SiHFL014T-E3

SnPb

IRF730AS

--

SiHF730AS

--

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

± 30

Continuous Drain Current

5.5

A

3.5

22

Linear Derating Factor

0.6

W/°C

290

mJ

5.5

A

7.4

mJ

Maximum Power Dissipation

74

W

dV/dt

4.6

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply