50RIA80 datasheet(3/7 Pages) VISHAY

Part #	50RIA80

Description	Medium Power Thyristors (Stud Version), 50 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 93711

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 19-Sep-08

3

50RIA Series

Medium Power Thyristors

(Stud Version), 50 A

Vishay High Power Products

Note

(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum rate of

rise of turned-on current

VDRM ≤ 600 V

dI/dt

TC = 125 °C, VDM = Rated VDRM,

Gate pulse = 20 V, 15

Ω, t

p = 6 µs, tr = 0.1 µs maximum

ITM = (2 x rated dI/dt) A

200

A/µs

VDRM ≤ 1600 V

100

Typical delay time

td

TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit

Gate pulse = 10 V, 15

Ω source, t

p = 20 µs

0.9

µs

Typical turn-off time

tq

TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs

dIr/dt = - 10 A/µs, VR = 50 V

110

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of

off-state voltage

dV/dt

TJ = TJ maximum linear to 100 % rated VDRM

200

V/µs

TJ = TJ maximum linear to 67 % rated VDRM

500 (1)

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

TJ = TJ maximum, tp ≤ 5 ms

10

W

Maximum average gate power

PG(AV)

2.5

Maximum peak positive gate current

IGM

2.5

A

Maximum peak positive gate voltage

+VGM

20

V

Maximum peak negative gate voltage

-VGM

10

DC gate current required to trigger

IGT

TJ = - 40 °C

Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units 6 V

anode to cathode applied

250

mA

TJ = 25 °C

100

TJ = 125 °C

50

DC gate voltage required to trigger

VGT

TJ = - 40 °C

3.5

V

TJ = 25 °C

2.5

DC gate current not to trigger

IGD

TJ = TJ maximum,

VDRM = Rated voltage

Maximum gate current/voltage not

to trigger is the maximum value

which will not trigger any unit with

rated VDRM anode to cathode

applied

5.0

mA

DC gate voltage not to trigger

VGD

TJ = TJ maximum

0.2

V

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