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50RIA80 Datasheet(PDF) 3 Page - Vishay Siliconix |
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50RIA80 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 3 50RIA Series Medium Power Thyristors (Stud Version), 50 A Vishay High Power Products Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum rate of rise of turned-on current VDRM ≤ 600 V dI/dt TC = 125 °C, VDM = Rated VDRM, Gate pulse = 20 V, 15 Ω, t p = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A 200 A/µs VDRM ≤ 1600 V 100 Typical delay time td TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit Gate pulse = 10 V, 15 Ω source, t p = 20 µs 0.9 µs Typical turn-off time tq TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs dIr/dt = - 10 A/µs, VR = 50 V 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 200 V/µs TJ = TJ maximum linear to 67 % rated VDRM 500 (1) TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 W Maximum average gate power PG(AV) 2.5 Maximum peak positive gate current IGM 2.5 A Maximum peak positive gate voltage +VGM 20 V Maximum peak negative gate voltage -VGM 10 DC gate current required to trigger IGT TJ = - 40 °C Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 250 mA TJ = 25 °C 100 TJ = 125 °C 50 DC gate voltage required to trigger VGT TJ = - 40 °C 3.5 V TJ = 25 °C 2.5 DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated voltage Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 5.0 mA DC gate voltage not to trigger VGD TJ = TJ maximum 0.2 V |
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