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21TT100 Datasheet(PDF) 1 Page - Vishay Siliconix |
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21TT100 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 94404 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 05-Sep-08 1 High Performance Schottky Generation 5.0, 20 A 21TT100 Vishay High Power Products FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Full lead (Pb)-free and RoHS compliant devices • Designed and qualified for industrial level APPLICATIONS • High efficiency SMPS • Automotive • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • Dc-to-dc systems • Increased power density systems PRODUCT SUMMARY IF(AV) 20 A VR 100 V VF at 20 A at 125 °C 0.68 V TO-220AB Cathode to base 2 Anode 1 Anode 3 RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 100 V VF 20 Apk, TJ = 125 °C (typical, per leg) 0.65 TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS 21TT100 UNITS Maximum DC reverse voltage VR TJ = 25 °C 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TC = 142 °C, rectangular waveform 20 A Maximum peak one cycle non-repetitive surge current at TJ = 175 °C IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 660 10 ms sine or 6 ms rect. pulse 220 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67.5 mJ Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 IAS at TJ max. A |
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