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31DQ09GTR Datasheet(PDF) 1 Page - Vishay Siliconix |
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31DQ09GTR Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 93322 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 06-Nov-08 1 Schottky Rectifier, 3.3 A 31DQ09G, 31DQ10G Vishay High Power Products FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long termreliability • Lead (Pb)-free plating • Designed and qualified for industrial level DESCRIPTION The 31DQ..G axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 3.3 A VR 90/100 V C-16 Cathode Anode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 3.3 A VRRM 90/100 V IFSM tp = 5 µs sine 370 A VF 3 Apk, TJ = 25 °C 0.85 V TJ - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL 31DQ09G 31DQ10G UNITS Maximum DC reverse voltage VR 90 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) 50 % duty cycle at TC = 53.4 °C, rectangular waveform 3.3 A Maximum peak one cycle non-repetitive surge current, TJ = 25 °C See fig. 6 IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 370 10 ms sine or 6 ms rect. pulse 60 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, 18 µs square pulse 3.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
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