Document Number: 93043

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 22-Oct-08

1

Ultrafast Soft Recovery Diode, 8 A

HFA08TB120S

Vishay High Power Products

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA08TB120S is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 8 A continuous current, the

HFA08TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly

reduce

snubbing,

component

count

and

heatsink sizes. The HEXFRED HFA08TB120S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

1200 V

3.3 V

8 A

28 ns

150 °C

140 nC

85 A/µs

4.5 A

N/C

Base

cathode

Anode

1

3

2

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

V

Maximum continuous forward current

8

A

Single pulse forward current

130

Maximum repetitive forward current

32

Maximum power dissipation

73.5

W

29

Operating junction and storage temperature range

- 55 to + 150

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply