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STY100NS20FD Datasheet(PDF) 4 Page - STMicroelectronics |
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STY100NS20FD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STY100NS20FD 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 200 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 50A 0.022 0.024 Ω Table 5. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID = 50A 30 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 7900 1500 460 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 100V, ID = 100A, VGS = 10V (see Figure 13) 360 35 135 nC nC nC |
Similar Part No. - STY100NS20FD_06 |
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Similar Description - STY100NS20FD_06 |
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