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June 2008 Rev 2 1/12 12 STS8DNH3LL Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET™ III Power MOSFET Features ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Switching losses reduced Application ■ Switching applications Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology which is suitable for the most demanding DC-DC converter applications where high efficiency is required. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STS8DNH3LL 30 V < 0.022 Ω 8 A S0-8 Table 1. Device summary Order code Marking Package Packaging STS8DNH3LL 8DH3LL SO-8 Tape & reel |
