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STS4C3F30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4C3F30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STS4C3F30L Electrical ratings 3/14 1 Electrical ratings Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed Table 1. Absolute maximum ratings Symbol Parameter Value Unit N-channel P-channel VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ± 16 V ID Drain current (continuos) at TC = 25°C S.O. 5 2.7 A ID Drain current (continuos) at TC = 100°C S.O. 3.2 1.7 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 20 11 A PTOT Total dissipation at TC = 25°C D.O. Total dissipation at TC = 25°C S.O. 1.6 2 W W Tstg Storage temperature -60 to 150 W/°C Tj Max. operating junction temperature 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case S.O. 62.5 °C/W Thermal resistance junction-case D.O. 78.0 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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