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ZXMC3F31DN8 Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMC3F31DN8 Datasheet(HTML) 4 Page - Zetex Semiconductors |
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4 / 11 page  ZXMC3F31DN8 Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS 30 V ID = 250μA, VGS=0V Zero Gate voltage Drain current IDSS 0.5 µA VDS=30V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source threshold voltage VGS(th) 1.0 3.0 V ID= 250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 0.024 0.039 Ω VGS= 10V, ID= 7.0A VGS= 4.5, ID= 6.0A Forward Transconductance (*) (†) gfs 16.5 S VDS= 15V, ID= 7.0A Dynamic (†) Input capacitance Ciss 608 pF Output capacitance Coss 132 pF Reverse transfer capacitance Crss 72 pF VDS= 15V, VGS=0V f=1MHz Switching (‡) (†) Turn-on-delay time td(on) 2.9 ns Rise time tr 3.3 ns Turn-off delay time td(off) 16 ns Fall time tf 8 ns VDD= 15V, VGS=10V ID= 1A RG ≅ 6.0Ω, Total Gate charge Qg 12.9 nC Gate-Source charge Qgs 2.5 nC Gate-Drain charge Qgd 2.52 nC VDS= 15V, VGS= 10V ID= 7A Source–Drain diode Diode forward voltage (*) VSD 0.82 1.2 V IS= 1.7A,VGS=0V Reverse recovery time (‡) trr 12 ns Reverse recovery charge (‡) Qrr 4.8 nC IS= 2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 4 © Diodes Incorporated 2008 www.zetex.com www.diodes.com |
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