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STL65N3LLH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL65N3LLH5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STL65N3LLH5 Electrical characteristics 5/12 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 9.5 A, RG=4.7 Ω, VGS=10 V (see Figure 13) 9.3 14.5 22.7 4.5 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 19 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 76 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 19 A, VGS=0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19 A, di/dt = 100 A/µs, VDD=25 V, Tj=150 °C 25 17.5 1.4 ns nC A |
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