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EGF1B Datasheet(PDF) 1 Page - Vishay Siliconix |
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EGF1B Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page EGF1A thru EGF1D Vishay General Semiconductor Document Number: 88579 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 1.0 V TJ max. 175 °C Patented* ® DO-214BA (GF1) * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT Device marking code EA EB EC ED Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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