New Product

EDF1AS thru EDF1DS

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88578

Revision: 30-Jan-08

2

Note:

(1) Pulse test: 300 ms pulse width, 1 % duty cycle

Note:

(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

TEST CONDITIONS

SYMBOL

EDF1AS

EDF1BS

EDF1CS

EDF1DS

UNIT

Maximum instantaneous forward

voltage drop per diode

1.05

V

Maximum DC reverse current at rated

DC blocking voltage per diode

5.0

1.0

µA

mA

Maximum reverse recovery time

per diode

50

ns

PARAMETER

SYMBOL

EDF1AS

EDF1BS

EDF1CS

EDF1DS

UNIT

38

12

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

EDF1DS-E3/45

0.406

45

50

Tube

EDF1DS-E3/77

0.406

77

1500

13" diameter paper tape and reel

Figure 1. Derating Curves Output Rectified Current

20

40

60

80

100

120

140

160

0

0.5

1.0

I

or Inductive Load

0.75

0.25

0.51 x 0.51" (13 x 13 mm)

Copper Pads

Ambient Temperature (°C)

Capacitive

Loads

5.0

10

20

=

I

pk

I

AV

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

1

10

100

0

10

20

30

40

50

60

Number of Cycles at 60 Hz

T

Single Sine-Wave

1.0 Cycle