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STD40N2LH5 - STU40N2LH5 Electrical characteristics 3/12 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown Voltage ID = 250 µA, VGS= 0 25 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 25 V VDS = 25 V, TC = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 20 A SMD version 0.01 0.012 Ω VGS= 10 V, ID= 20 A 0.0106 0.0126 Ω VGS= 5 V, ID= 20 A SMD version 0.0135 0.017 Ω VGS= 5 V, ID= 20 A 0.0141 0.0176 Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 840 180 29 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 40 A VGS = 5 V 8 TBD TBD nC nC nC Qgs1 Qgs2 Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=15 V, ID = 40 A VGS = 5 V TBD TBD nC nC RG Gate input resistance f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain 1.1 Ω |
