STF10NM65N datasheet(5/17 Pages) STMICROELECTRONICS

Part #	STF10NM65N

Description	N-channel 650 V, 0.43 廓, 9 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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5 / 17 page

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N

Electrical characteristics

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 325 V, ID = 4.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 18)

12

8

50

20

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

9

36

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 9 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 9 A,

di/dt = 100 A/µs

VDD = 100 V

(see Figure 20)

330

3

19

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 9 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 20)

430

4

19

ns

µC

A

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