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T820-800W Datasheet(PDF) 2 Page - STMicroelectronics |
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T820-800W Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page T820-xxxW / T830-xxxW 2/5 PG (AV)=1W PGM =10W(tp=20 µs) IGM =4A(tp=20 µs GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.1 °C/W THERMAL RESISTANCES Symbol Test Conditions Quadrant T820 T830 Unit IGT VD=12V (DC) RL=33 Ω Tj= 25°C I-II-III MAX 20 30 mA VGT VD=12V (DC) RL=33 Ω Tj= 25 °C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3k Ω Tj= 125°C I-II-III MIN 0.2 V tgt VD=VDRM IG =500mA dlG/dt= 3A µs Tj= 25°C I-II-III TYP 2 µs IH * IT= 100mA Gate open Tj= 25 °C MAX 35 50 VTM * ITM= 11A tp= 380 µs Tj= 25 °C MAX 1.5 V IDRM IRRM VDRM rated VRRM rated Tj= 25 °C MAX 10 µA Tj= 125°C MAX 2 mA dV/dt * Linear slope up to VD=67%VDRM Gate open Tj= 125 °C MIN 200 300 V/ µs (dV/dt)c * (dI/dt)c = 4.5 A/ms (see note) Tj= 125 °C MIN 10 20 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/ µs, and, therefore, it is unnecessary to use a snuber R-C network accross T820W / T830W triacs. ELECTRICAL CHARACTERISTICS |
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