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DG3003DB-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG3003DB-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 72505 S-70853–Rev. C, 30-Apr-07 www.vishay.com 3 Vishay Siliconix DG3001/3002/3003 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3.0 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %,VIN = 0.4 V or 2.0 V e Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistanced rON V+ = 2.7 V, VCOM = 1.5 V INO, INC = 10 mA Room Full 0.4 0.7 0.8 Ω rON Flatness d rON Flatness V+ = 2.7 V, VCOM = 0 to V+ INO, INC = 10 mA Room 0.1 0.2 rON Match d Δr ON Room 0.01 0.05 Switch Off Leakage Currentf INO(off) INC(off) V+ = 3.3 V, VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V Room Full - 1 - 10 1 10 nA ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full - 1 - 10 1 10 Digital Control Input High Voltage VINH Full 2 V Input Low Voltage VINL Full 0.4 Input Capacitanced Cin Full 5 pF Input Currentd IINL or IINH VIN = 0 or V+ Full - 1 1 µA Dynamic Characteristics Turn-On Timed tON VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Figure 1 and 2 Room Full 47 71 ns Turn-Off Timed tOFF Room Full 40 59 Break-Before-Make Timed td Room 1 6 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 64 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF, f = 100 kHz Room - 70 dB Crosstalkd XTALK Room - 70 NO, NC Off Capacitance d CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz Room 100 pF Channel-On Capacitanced CON Room 340 Power Supply Positive Supply Range V+ 2.7 3.3 V Negative Supply Current I+ VIN = 0 or V+ 0.1 1.0 µA |
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