TPS65058 datasheet(4/26 Pages) TI

Part #	TPS65058

Description	2.25 MHz Dual STEP DOWN CONVERTER WITH 3 LOW-INPUT VOLTAGE LDOs

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Manufacturer	TI [Texas Instruments]

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ELECTRICAL CHARACTERISTICS

TPS65058

SLVS851A – MAY 2008 – REVISED SEPTEMBER 2008................................................................................................................................................... www.ti.com

Vcc = VINDCDC1/2 = 3.6V, EN = Vcc, MODE = GND, L = 2.2µH, COUT = 22µF, TA = –40°C to 85°C typical values

are at TA = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

Vcc

Input voltage range

2.5

6.

V

One converter, IOUT = 0 mA.PFM mode enabled (Mode = GND)

device not switching,

20

30

µA

EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1= EN_LDO2 = EN_LDO3 = GND

Two converters, IOUT = 0 mA, PFM mode enabled (Mode = 0)

Operating quiescent current

device not switching,

IQ

Total current into VCC, VINDCDC1/2,

32

40

µA

EN_DCDC1 = Vin AND EN_DCDC2 = Vin;

VINLDO1, VINLDO2/3

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

One converter, IOUT = 0 mA, PFM mode enabled (Mode = GND)

device not switching,

145

210

µA

EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = Vin

One converter, IOUT = 0 mA,

Switching with no load (Mode = Vin),

0.85

mA

PWM operation EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

IQ

Operating quiescent current into VCC

Two converters, IOUT = 0 mA,

Switching with no load (Mode = Vin),

1.25

mA

PWM operation EN_DCDC1 = Vin AND EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

EN_DCDC1 = EN_DCDC2 = GND

I(SD)

Shutdown current

9

12

µA

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

Undervoltage lockout threshold for

V(UVLO)

Voltage at VCC

1.8

2

V

DCDC converters and LDOs

EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2, EN_LDO3, MODE

High-level input voltage

MODE, EN_DCDC1, EN_DCDC2,

VIH

1.2

VCC

V

EN_LDO1, EN_LDO2, EN_LDO3,

DEF,DEF_LDO,DEF_DCDC2

Low-level input voltage

MODE, EN_DCDC1, EN_DCDC2,

VIL

0

0.4

V

EN_LDO1, EN_LDO2, EN_LDO3,

DEF_LDO, DEF_DCDC2

Input bias current

MODE, EN_DCDC1, EN_DCDC2,

IIN

MODE = GND or VIN

0.01

1

µA

EN_LDO1, EN_LDO2, EN_LDO3,

DEF_LDO, DEF_DCDC2

POWER SWITCH

VINDCDC1/2 = 3.6V

250

350

P-channel MOSFET on

DCDC1,

rDS(on)

m

Ω

resistance

DCDC2

VINDCDC1/2 = 2.5V

380

500

ILD_PMOS

P-channel leakage current

V(DS) = 6V

1

µA

VINDCDC1/2 = 3.6V

180

250

N-channel MOSFET on

DCDC1,

rDS(on)

m

Ω

resistance

DCDC2

VINDCDC1/2 = 2.5V

250

ILK_NMOS

N-channel leakage current

V(DS) = 6V

7

10

µA

Forward Current Limit

DCDC1

1.19

1.4

1.65

I(LIMF)

PMOS (High-Side) and

2.5V

≤ VIN ≤ 6V

A

DCDC2

0.85

1.0

1.15

NMOS (Low side)

TSD

Thermal shutdown

Increasing junction temperature

150

°C

Thermal shutdown hysteresis

Decreasing junction temperature

20

°C

OSCILLATOR

fSW

Oscillator frequency

2.025

2.25

2.475

MHz

4

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