1N4150-TAP datasheet(2/4 Pages) VISHAY

Part #	1N4150-TAP

Description	Small Signal Fast Switching Diodes

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85522

Rev. 1.7, 16-Feb-07

1N4150

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Package Dimensions in mm (inches): DO35

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 1 mA

VF

540

620

mV

IF = 10 mA

VF

660

740

mV

IF = 50 mA

VF

760

860

mV

IF = 100 mA

VF

820

920

mV

IF = 200 mA

VF

870

1000

mV

Reverse current

VR = 50 V

IR

100

nA

VR = 50 V, Tj = 150 °C

IR

100

µA

Diode capacitance

VR = 0, f = 1 MHz, VHF = 50 mV

CD

2.5

pF

Reverse recovery time

IF = IR = (10 to 100) mA, iR = 0.1

x IR, RL = 100 Ω

trr

4ns

Figure 1. Reverse Current vs. Junction Temperature

040

80

120

160

200

0.01

0.1

1

10

100

Tj - Junction Temperature (°C)

94 9100

Scattering Limit

V

R = 50 V

Figure 2. Forward Current vs. Forward Voltage

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF - Forward Voltage (V)

2.0

94 9162

Scattering Limit

Tj = 25 °C

94 9366

26 min. (1.024)

3.9 max. (0.154)

26 min. (1.024)

Cathode Identification

Rev. 6 - Date: 29.January 2007

Document no.: 6.560-5004.02-4

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