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HD6433856 Datasheet(PDF) 7 Page - Renesas Technology Corp |
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HD6433856 Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 560 page  Rev.3.00 Jul. 19, 2007 Page vii of xxiv REJ09B0397-0300 Main Revisions for This Edition Item Page Revision (See Manual for Details) All ⎯ • Company name and brand names amended (Before) Hitachi, Ltd. → (After) Renesas Technology Corp. • Designation for categories amended (Before) H8/3857 Series → (After) H8/3857 Group (Before) H8/3854 Series → (After) H8/3854 Group 2.2.1 General Registers Figure 2.2 Stack Pointer 29 Figure amended Lower address side [H'0000] Upper address side [H'FFFF] Unused area Stack area SP (R7) 98 Table condition amended (V CC = 2.7 V to 5.5 V of the mask ROM version of H8/3852, H8/3853, and H8/3854, V CC = 3.0 V to 5.5 V of H8/3854F and H8/3857 Group, AV CC = 3.0 V to 5.5 V, VSS = AVSS = 0.0 V, T a = –20°C to + 75°C*, unless otherwise specified, including subactive mode) 4.3 Subclock Generator Table 4.2 DC Characteristics and Timing Table note amended Note: * The guaranteed temperature as an electrical characteristic for die type products is 75°C. 6.2.1 Features 120 Description amended • Programming/erase methods The flash memory is programmed 32 bytes at a time. Erasing is performed in block units. To erase multiple blocks, each block must be erased in turn. In block erasing, 1-kbyte, 28-kbyte, 16- kbyte, and 12-kbyte blocks can be set arbitrarily. 6.5.4 Erase-Verify Mode 143 Description amended After the elapse of the erase time, erase mode is exited (the E bit in FLMCR1 is cleared, then the ESU bit in FLMCR2 is cleared at least ( α) μs later). |
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