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HD6433047VF Datasheet(PDF) 9 Page - Renesas Technology Corp |
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HD6433047VF Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 905 page Rev. 7.00 Sep 21, 2005 page ix of xxiv Item Page Revision (See Manual for Details) 19.5.6 Erasing Flowchart and Sample Program Prewrite Flowchart Figure 19.11 Prewrite Flowchart 611 Figure amended End of prewrite n ≥ N? n + 1 Double the programming time (x × 2 → x) → n No Write H'00 to flash memory (flash memory latches write address and write data) Enable watchdog timer*2 *1 Select program mode (set P bit to 1 in FLMCR) Wait (x) µs Clear P bit Disable watchdog timer Wait (tVS1) µs Prewrite verify*3 (read data = H'00?) Last address? No good No Yes Programming ends Programming error OK Yes V E PP Clear bit Clear erase block register (clear bit of block to be erased to 0) Clear erase block register (clear bit of block to be erased to 0) Clear VPPE bit Notes: 1. Use a byte transfer instruction. 2. Set the watchdog timer overflow interval by setting CKS2 = 0, CKS1 = 0 and CKS0 = 1. 3. In prewrite-verify mode P, E, PV, and EV are all cleared to 0 and 12 V is applied to VPP. Use a byte transfer instruction. 4. tVS1: 4 µs z: 5 to 10 µs N: 6 (set N so that total programming time does not exceed 1 ms) *4 |
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