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STX112 Datasheet(PDF) 3 Page - STMicroelectronics |
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STX112 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page STX112, STX117 Electrical characteristics Doc ID 6881 Rev 4 3/9 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Note: For PNP types voltage and current values are negative. 2.1 Typical characteristic (curves) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 100 V - 1 mA ICEO Collector cut-off current (IB = 0) VCE = 50 V - 2 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter sustaining voltage (IB = 0) IC = 30 mA 100 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 2 A IB = 8 mA - 2.5 V VBE(on) Base-emitter on voltage IC = 2 A VCE = 4 V - 2.8 V hFE (1) DC current gain IC = 1 A_ _ VCE = 4 V 1000 - IC = 2 A_ VCE = 4 V 500 - Figure 2. DC current gain (VCE = 3 V NPN) Figure 3. DC current gain (VCE = - 3 V PNP) |
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